Paper Title:
Influence of Chemical Modification on the Electrical Properties of Si Nanowire Arrays
  Abstract

The influence of the chemical modification on the electrical property of Si nanowire array was studied. It is found that H-terminated Si nanowire has a better electrical conductivity while OH-passivation could increase their resistance. It is believed that the introducing of OH group on the surface nanowire increases the interface traps and it is confirmed by our 1/f noise measurement.

  Info
Periodical
Advanced Materials Research (Volumes 160-162)
Edited by
Guojun Zhang and Jessica Xu
Pages
1331-1335
DOI
10.4028/www.scientific.net/AMR.160-162.1331
Citation
C. B. Li, K. Fobelets, S.N. Syed Jalal, W. A. Ng, Z. A.K. Durrani, "Influence of Chemical Modification on the Electrical Properties of Si Nanowire Arrays", Advanced Materials Research, Vols. 160-162, pp. 1331-1335, 2011
Online since
November 2010
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