Paper Title:
Effect of Hydrogenation on Structural, Optical and Electrical Properties of Amorphous InAsSb Thin Films
  Abstract

Amorphous InAsSb films and hydrogenated InAsSb films are deposited on substrates of quartz glass and silicon by rf magnetron sputtering technique in different gas ambient. The effect of H addition on structure, optical properties and electrical properties of a-InAsSb is studied. It is found that the bonded hydrogen content increases with increasing H2 to Ar flow rate radio(R). When R is 0.1, Hydrogen addition shifts the optical absorption edge to higher energy, decreases the dark conductivity and improves the photo-sensitivity. However, hydrogen addition produces the crystallization of the film at R>0.1. Moreover the optical gap, dark conductivity and photo-sensitivity of the films have a reverse change compared with that in R=0. These results demonstrate that hydrogen has obvious passivation effects on rf sputtered amorphous InAsSb thin films only at R=0.1.

  Info
Periodical
Advanced Materials Research (Volumes 160-162)
Edited by
Guojun Zhang and Jessica Xu
Pages
1508-1512
DOI
10.4028/www.scientific.net/AMR.160-162.1508
Citation
Y. P. Yao, C. L. Liu, H. D. Qi, X. Chang, C. W. Wang, "Effect of Hydrogenation on Structural, Optical and Electrical Properties of Amorphous InAsSb Thin Films", Advanced Materials Research, Vols. 160-162, pp. 1508-1512, 2011
Online since
November 2010
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$32.00
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