Paper Title:
Transparent Conducting ZnO:Ga Epitaxial Films Prepared on Epi-GaN/Al2O3 (0001) by MOCVD
  Abstract

High-quality Gallium-doped zinc oxide (ZnO:Ga) films have been prepared on epi-GaN/sapphire (0001) substrates by the metalorganic chemical vapour deposition (MOCVD) method. The relative amount of gallium doping was varied from 0 to 8% (atomic ratio). The structural, electrical and optical properties of the ZnO:Ga films have been investigated in detail, as a function of Ga content. All the prepared samples have the wurtzite structure of pure ZnO with a strong (0002) preferred orientation. The microstructure for the surface of films was markedly influenced by the amount of Ga doping. The resistivity decreases continuously with adding Ga content and reaches to the value of 8.4×10-3 Ω•cm at 8%. The average transmittance for the deposited ZnO:Ga samples in the visible range was over 75%.

  Info
Periodical
Advanced Materials Research (Volumes 160-162)
Edited by
Guojun Zhang and Jessica Xu
Pages
634-639
DOI
10.4028/www.scientific.net/AMR.160-162.634
Citation
Q. Q. Yu, J. Ma, C. N. Luan, L. Y. Kong, Z. Zhu, "Transparent Conducting ZnO:Ga Epitaxial Films Prepared on Epi-GaN/Al2O3 (0001) by MOCVD", Advanced Materials Research, Vols. 160-162, pp. 634-639, 2011
Online since
November 2010
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$32.00
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