Paper Title:
Electrical Characteristics and Microstructures of Eu2O3-Doped Bi4Ti3O12 Thin Films
  Abstract

Eu2O3-doped bismuth titanate (Bi1-xEuxTi3O12: BET) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BET films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with x=0.0 , 0.25, 1.0 and 1.25, I-E characteristics exhibited negative differential resistance behaviors and their ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with x=0.5 and 0.75, I-E characteristics were simple ohmic behaviors and their ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization (Pr) and coercive field (Ec) of the BET Film with x=0.75 were above 30μC/cm2 and 85KV/cm , respectively.

  Info
Periodical
Edited by
Yiwang Bao, Li Tian and Jianghong Gong
Pages
197-200
DOI
10.4028/www.scientific.net/AMR.177.197
Citation
X.A. Mei, M. Chen, K.L. Su, A.H. Cai, J. Liu, W. K. An, Y. Zhou, M. Jia, "Electrical Characteristics and Microstructures of Eu2O3-Doped Bi4Ti3O12 Thin Films", Advanced Materials Research, Vol. 177, pp. 197-200, 2011
Online since
December 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: S. Chen, A.H. Cai, X.A. Mei, Chong Qing Huang, W.K. An, Min Chen
Abstract:Sm-doped bismuth titanate and random oriented Bi4-xCexTi3O12 (BCT) thin films were fabricated on Pt/Ti/SiO2/Si substrates rf magnetron...
91
Authors: Min Chen, X.A. Mei, Rui Fang Liu, C.Q. Huang, J. Liu
Abstract:The ferroelectricity of Bi3.25Nd0.75Ti3O12 (BNT), and...
174
Authors: Rui Fang Liu, M.B. Sun, W.P. Ding, X.A. Mei
Abstract:Bi3.3Tb0.6Ti3O12(BTT),...
126
Authors: C.Q. Huang, X.B. Liu, X.A. Mei, J. Liu
Abstract:Nd2O3-doped bismuth titanate (Bi4-xNdxTi3O12: BNT) thin films with random...
130
Authors: J.G. Liu, X.A. Mei, C.Q. Huang, J. Liu
Abstract:Bi3.25Gd0.75Ti2.97V0.03O12 (BGTV) ceramics were prepared by solid state reaction....
170