Pr6O11-doped bismuth titanate (BixPryTi3O12 BPT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BPT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. Pr doping into Bi4Ti3O12 (BIT) causes a large shift of the Curie temperature (TC) of paraelectric-ferroelectric phase transition of BIT from 675°C to lower temperature and improvement in dielectric properties. The experimental results indicate that Pr doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT film with y=0.9 were 35 μC/cm2 and 80 kV/cm, respectively. After 3 1010 switching cycles, 20% degradation of Pr is observed in the film.