Paper Title:
Defects of GaAs Crystals Grown by the Pulling-Down Method
  Abstract

Compound semiconductor GaAs crystal was grown by the pulling-down method and the Φ2" GaAs boules were obtained. The growth defects, such as growth stripes, small facets, pits and dislocations, were observed. The pits on the surface of the boule was attributed to the water content of B2O3 encapsulant and the growth defects on the tail were associated with the evaporation of As due to GaAs decomposition. The average EPD (etch pit density) was measured less than 5000 cm-2, which shows the pulling-down method was a potential technique to grow high quality GaAs crystals.

  Info
Periodical
Edited by
Yiwang Bao, Li Tian and Jianghong Gong
Pages
219-222
DOI
10.4028/www.scientific.net/AMR.177.219
Citation
M. Jin, J. Y. Xu, Q. B. He, Y. Z. Fang, H. Shen, G. J. Jiang, Z. Y. Wang, "Defects of GaAs Crystals Grown by the Pulling-Down Method", Advanced Materials Research, Vol. 177, pp. 219-222, 2011
Online since
December 2010
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