Paper Title:
Zinc Oxide Thin Films Grown by RF Magnetron Sputtering on Nanostructure Al Thin Layer/Glass and Glass Substrates
  Abstract

ZnO films with random and highly (002)-preferred orientation were deposited on nanostructured Al (n-Al) /glass and glass substrates at room temperature by RF magnetron sputtering method, respectively. According to I (002)/I (100) ≈I annealed (002)/I annealed (100) ≈1.1 (on n-Al) and 2I annealed (002) /I (002) (on n-Al) ≈ I annealed (002) /I (002) (on glass) ≈3.1, the rough n-Al surface is suitable for the growth of a-axis orientation, and the appearance of the (100) peak plays a major role in decreasing the c-axis orientation. The average optical transmission of the film on n-Al layer increased significantly after annealing. At the same time, the growth mode and E g of ZnO films were discussed. On n-Al layer/glass substrate, it is not easy for the growth interface to form the smooth surface during the deposition process and Stranski Krstanov plays a primary role on the deposition of the films. Due to the significant increase of the interplanar spacing d (101), the band gaps for as-grown and annealed films grown on n-Al decreased, comparing with that of the film deposited on glass substrate.

  Info
Periodical
Edited by
Yiwang Bao, Li Tian and Jianghong Gong
Pages
398-403
DOI
10.4028/www.scientific.net/AMR.177.398
Citation
T.Z. Liu, S. W. Duo, H. Zhang, M.J. Ran, "Zinc Oxide Thin Films Grown by RF Magnetron Sputtering on Nanostructure Al Thin Layer/Glass and Glass Substrates", Advanced Materials Research, Vol. 177, pp. 398-403, 2011
Online since
December 2010
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