CuInSe2 thin films were obtained by selenization of the Cu-In precursors in the atmosphere of Se vapour, which were prepared on stainless steel and titanium substrates by electrodeposition. The films were characterized by XRD, scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The respective influences of composition, phases and surface morphology of Cu-In precursors on indium loss were investigated. The results indicate that the indium loss occurs in selenization process because of volatile In2Se arising. The indium loss is less in selenization process of Cu-In precursors contained CuIn, Cu2In and In phases.