Paper Title:
Study of Stress in TiO2 Films Grown by Electron-Beam Evaporation
  Abstract

TiO2 films were fabricated on Si substrate by using electron-beam gun evaporation. Influence of deposition rate, deposition temperature and ion beam bombarding on stress in TiO2 films was studied by AFM and XRD. The results show that deposition temperature of 423K and deposition rate of 0.2nm/s, the average stress in titanium oxide thin films is less than 48.2MPa. The average stress decreases to compressive stress of 16.7MPa from tensile stress of 72.9MPa by the ion beam energy of 113eV and bombarding time of 300s. The microstructure change of TiO2 films is main factors of stress development.

  Info
Periodical
Advanced Materials Research (Volumes 189-193)
Edited by
Zhengyi Jiang, Shanqing Li, Jianmin Zeng, Xiaoping Liao and Daoguo Yang
Pages
1233-1237
DOI
10.4028/www.scientific.net/AMR.189-193.1233
Citation
Tao Chen et al., 2011, Advanced Materials Research, 189-193, 1233
Online since
February 2011
Price
US$ 28,-
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