Paper Title:

Study of Stress in TiO2 Films Grown by Electron-Beam Evaporation

Periodical Advanced Materials Research (Volumes 189 - 193)
Main Theme Manufacturing Process Technology
Edited by Zhengyi Jiang, Shanqing Li, Jianmin Zeng, Xiaoping Liao and Daoguo Yang
Pages 1233-1237
DOI 10.4028/www.scientific.net/AMR.189-193.1233
Citation Tao Chen et al., 2011, Advanced Materials Research, 189-193, 1233
Online since February, 2011
Authors Tao Chen, Duo Shu Wang, Yu Qing Xiong
Keywords Compressive Stress, Ion Beam Bombarding, Tensile Stress, Thin Film, TiO2
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TiO2 films were fabricated on Si substrate by using electron-beam gun evaporation. Influence of deposition rate, deposition temperature and ion beam bombarding on stress in TiO2 films was studied by AFM and XRD. The results show that deposition temperature of 423K and deposition rate of 0.2nm/s, the average stress in titanium oxide thin films is less than 48.2MPa. The average stress decreases to compressive stress of 16.7MPa from tensile stress of 72.9MPa by the ion beam energy of 113eV and bombarding time of 300s. The microstructure change of TiO2 films is main factors of stress development.

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