Paper Title:
The Simulation of Polycrystalline Silicon Thin Film Deposition in PECVD System
  Abstract

Taking Silicon tetrachloride (SiCl4) and hydrogen (H2) as the reaction gas, by the method of plasma-enhanced chemical vapor deposition (PECVD), this paper simulates the deposition process of polycrystalline silicon thin film on the glass substrates in the software FLUENT. Three dimensional physical model and mathematics model of the simulated area are established. The reaction mechanism including main reaction equation and several side equations is given during the simulation process. The simulation results predict the velocity field, temperature distribution, and concentration profiles in the PECVD reactor. The simulation results show that the deposition rate of silicon distribution is even along the circumference direction, and gradually reduced along the radius direction. The deposition rate is about 0.005kg/(m2•s) at the center. The simulated result is basically consistent with the practical one. It means that numerical simulation method to predict deposition process is feasible and the results are reliable in PECVD system.

  Info
Periodical
Advanced Materials Research (Volumes 189-193)
Edited by
Zhengyi Jiang, Shanqing Li, Jianmin Zeng, Xiaoping Liao and Daoguo Yang
Pages
2032-2036
DOI
10.4028/www.scientific.net/AMR.189-193.2032
Citation
Z. J. Wang, X. F. Shang, "The Simulation of Polycrystalline Silicon Thin Film Deposition in PECVD System", Advanced Materials Research, Vols. 189-193, pp. 2032-2036, 2011
Online since
February 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Kwang Ki Lee, Kwang Soon Lee, Tae Won Kim
Abstract:Physical vapor deposition technique has been employed to develop a thin film of OLED, and atomic force microscopy was used to investigate...
1431
Authors: Wei Zuo, Bin Shen, Fang Hong Sun, Ming Chen
Abstract:Three-dimensional finite element simulations were used to investigate the influences of various hot filaments and other deposition...
864
Authors: Ai Min Wu, Hong Yun Yue, X.Y. Zhang, Fu Wen Qin, T.J. Li, Xin Jiang
Abstract:The silicon nitride films have been deposited by Electron Cyclotron Resonance-plasma enhanced chemical vapor deposition (ECR-PECVD) method at...
1712
Authors: Jun Jie Hao, Yang Yang Li, Hui Ming Ji
Chapter 3: Forming and Shaping Processes and Equipment
Abstract:PZT thin film was prepared on platinized Si substrates by liquid-source mist microwave plasma enhanced chemical vapour deposition. Using...
1747