Electrical properties and microstructures of Mg(Zr0.05Ti0.95)O3 thin films prepared by sol-gel method on n-type Si(100) substrates at different annealing temperatures have been investigated. The diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited Mg(Zr0.05Ti0.95)O3 peaks orientation perpendicular to the substrate surface and the grain size with the increase in the annealing temperature. A low leakage current density of 1.1×10-4 A/cm2, a dielectric constant of 9.4 and an optical bandgap of 3.6 were obtained for the prepared films. It may find application in dynamic random access memories and wireless communication devices.