Paper Title:
Study of Mg(Zr0.05Ti0.95)O3 Dielectric Thin Films by Sol-Gel Method
  Abstract

Electrical properties and microstructures of Mg(Zr0.05Ti0.95)O3 thin films prepared by sol-gel method on n-type Si(100) substrates at different annealing temperatures have been investigated. The diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited Mg(Zr0.05Ti0.95)O3 peaks orientation perpendicular to the substrate surface and the grain size with the increase in the annealing temperature. A low leakage current density of 1.1×10-4 A/cm2, a dielectric constant of 9.4 and an optical bandgap of 3.6 were obtained for the prepared films. It may find application in dynamic random access memories and wireless communication devices.

  Info
Periodical
Advanced Materials Research (Volumes 194-196)
Edited by
Jianmin Zeng, Taosen Li, Shaojian Ma, Zhengyi Jiang and Daoguo Yang
Pages
2249-2253
DOI
10.4028/www.scientific.net/AMR.194-196.2249
Citation
C. F. Tseng, P. C. Yang, C. H. Lai, C. W. Lee, "Study of Mg(Zr0.05Ti0.95)O3 Dielectric Thin Films by Sol-Gel Method", Advanced Materials Research, Vols. 194-196, pp. 2249-2253, 2011
Online since
February 2011
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Price
$32.00
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