Paper Title:
Influence of Sputtering Power of Te and Annealing on Sb-Te Thin Films Fabricated by RF and DC Co-Sputtering
  Abstract

Antimony and tellurium were deposited on K9 glass via direct current and radio frequency magnetron co-sputtering. Antimony telluride thermoelectric thin films were simultaneously synthesized without post treatment. The influence of the sputtering power of Te and annealing of Sb-Te fabricated by magnetron sputtering were investigated. The maximum Seebeck coefficient of Sb-Te film was 212 μV/K which was obtained at the sputtering power of Sb 4W and Te 60W separately. When annealed at 300 °C, the electrical resistivity and Seebeck coefficient of the film are 6.67x104 S/m and 119 μV/K. The power factor increased to the highest value of 9.4×10-4 W/mK2 from 4×10-5 W/mK2 after post treatment of the as-deposited film.

  Info
Periodical
Advanced Materials Research (Volumes 194-196)
Edited by
Jianmin Zeng, Taosen Li, Shaojian Ma, Zhengyi Jiang and Daoguo Yang
Pages
2400-2403
DOI
10.4028/www.scientific.net/AMR.194-196.2400
Citation
T. B. Chen, P. Fan, Z. H. Zheng, D. P. Zhang, X. M. Cai, G. X. Liang, J. R. Chi, "Influence of Sputtering Power of Te and Annealing on Sb-Te Thin Films Fabricated by RF and DC Co-Sputtering", Advanced Materials Research, Vols. 194-196, pp. 2400-2403, 2011
Online since
February 2011
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$32.00
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