Paper Title:
Atomistic Model of Amorphous Silicon Nitride by Melt-Quench Method
  Abstract

Silicon nitride presents good mechanical properties and thermal stability at high temperature. To investigate the mechanism of this unique feature demands a proper atomistic simulation, as the experiments have limitations in nano-scale characterization of chemical structure and the related properties. In this paper, the melt-quench method was used to generate the amorphous structure of silicon nitride, and then the corresponding mechanical properties were studied. The simulation results consist with the experimental results on radial distribution function and Young’s modulus.

  Info
Periodical
Advanced Materials Research (Volumes 194-196)
Edited by
Jianmin Zeng, Taosen Li, Shaojian Ma, Zhengyi Jiang and Daoguo Yang
Pages
80-83
DOI
10.4028/www.scientific.net/AMR.194-196.80
Citation
N. B. Liao, M. Zhang, R. Jiang, X. Tao, "Atomistic Model of Amorphous Silicon Nitride by Melt-Quench Method", Advanced Materials Research, Vols. 194-196, pp. 80-83, 2011
Online since
February 2011
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Price
$32.00
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