Paper Title:
Influence of Sintering Temperature on the Electrical Properties of (La, Ta)-Doped TiO2 Capacitor-Varistor Ceramics
  Abstract

An investigation was made of low voltage TiO2 varistors doped with Ta2O5 and La2O3. TiO2 ceramics doped with 0.7 mol% La2O3 and 0.1 mol% Ta2O5 were sintered at different temperature ranging from 1350 to 1450°С . The influence of sintering temperature on microstructure and nonlinear properties of the (La, Ta)-doped TiO2 ceramics was studied. The varistor of 99.2 mol%-0.7 mol%La2O3-0.1 mol% Ta2O5 composite sintered at 1380°С has a maximal nonlinear coefficient of α =5.2 and a low breakdown voltage of 7.6 V/mm, which is consistent with its highest grain-boundary barriers. According to these results, it is suggested that the sample sintered at 1380°С forms the most efficient boundary barrier layer. Therefore, the sintering temperature is a very important varible which should not be despised in the project of TiO2 based varistors production.

  Info
Periodical
Advanced Materials Research (Volumes 197-198)
Edited by
Huaiying Zhou, Tianlong Gu, Daoguo Yang, Zhengyi Jiang, Jianmin Zeng
Pages
294-297
DOI
10.4028/www.scientific.net/AMR.197-198.294
Citation
Q. Qin, T. G. Wang, W. J. Zhang, "Influence of Sintering Temperature on the Electrical Properties of (La, Ta)-Doped TiO2 Capacitor-Varistor Ceramics", Advanced Materials Research, Vols. 197-198, pp. 294-297, 2011
Online since
February 2011
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$32.00
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