Paper Title:
Preparation of N Doped ZnO Films by Magnetron Sputtering
  Abstract

N doped ZnO thin films were prepared by magnetron sputtering. The effect of bias voltage, N2 flow and introducing of Al on the behavior of N doping into ZnO films were investigated. The results show that there is little help for N doping into the ZnO films by just adjusting N flow rate because the magnetron sputtering method has a relative weak ability on dissociating the N2. The data of co-doping of Al and N into ZnO films revealed that co-doping is an effective way to advance the N doping into ZnO films. The coordination of Al doping and bias voltage could help the N doping effectively.

  Info
Periodical
Advanced Materials Research (Volumes 197-198)
Edited by
Huaiying Zhou, Tianlong Gu, Daoguo Yang, Zhengyi Jiang, Jianmin Zeng
Pages
348-351
DOI
10.4028/www.scientific.net/AMR.197-198.348
Citation
S. S. Luo, W. K. Li, Z. H. Zhou, "Preparation of N Doped ZnO Films by Magnetron Sputtering", Advanced Materials Research, Vols. 197-198, pp. 348-351, 2011
Online since
February 2011
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Price
$32.00
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