Paper Title:
Preparation of N-Doped SiC Whisker by Combustion Synthesis
  Abstract

N-doped SiC whiskers with diameters of about 0.2 μm and length of 3-7 μm were synthesized via combustion reaction of Si/C system in Ar atmosphere, using NH4Cl as the dopant and polytetrafluoroethylene (PTFE) as the chemical activator. These whiskers are straight and curved morphologies. X-Ray powder diffraction pattern and energy-dispersive spectroscopy (EDS) confirm that the lattice constant of prepared whiskers is smaller than standard value of β-SiC due to the N doping arising.

  Info
Periodical
Advanced Materials Research (Volumes 197-198)
Edited by
Huaiying Zhou, Tianlong Gu, Daoguo Yang, Zhengyi Jiang, Jianmin Zeng
Pages
580-583
DOI
10.4028/www.scientific.net/AMR.197-198.580
Citation
X. L. Su, J. Xu, Z. M. Li, X. H. He, J. B. Wang, C. Fu, W. C. Zhou, F. Luo, "Preparation of N-Doped SiC Whisker by Combustion Synthesis", Advanced Materials Research, Vols. 197-198, pp. 580-583, 2011
Online since
February 2011
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$32.00
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