Paper Title:
Evaluation of the Capacitances by Using High Frequency Roll-Off Fitting to the Second Order Approximation
  Abstract

The characteristics and feasibility of the dielectric can be evaluated by the deposition of the dielectric in between two electrodes to form a capacitor. In metal-insulator-silicon (MIS) structure, 100 Å Ta2O5 films are deposited on 1000 Å doped poly silicon as a bottom electrode layer and 500 Å TiN metal on top of the dielectric film consecutively [1]. The measured capacitances of larger areas roll off at higher measuring frequency [2]. With the setting of an equivalent circuit, one successfully explains why the roll-off effect shows up. The deduced formulas give the common, reasonable, and convincing C1=1.1255×10-5 nF/mm2, which determines the equivalent dielectric (oxide) thickness 30.5Å.

  Info
Periodical
Advanced Materials Research (Volumes 204-210)
Edited by
Helen Zhang, Gang Shen and David Jin
Pages
554-557
DOI
10.4028/www.scientific.net/AMR.204-210.554
Citation
H. C. Yang, M. C. Wang, "Evaluation of the Capacitances by Using High Frequency Roll-Off Fitting to the Second Order Approximation", Advanced Materials Research, Vols. 204-210, pp. 554-557, 2011
Online since
February 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jeong Hyun Moon, Da Il Eom, Sang Yong No, Ho Keun Song, Jeong Hyuk Yim, Hoon Joo Na, Jae Bin Lee, Hyeong Joon Kim
Abstract:The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition (ALD) method. The electrical properties of La2O3 on 4H-SiC...
1083
Authors: Pawel A. Sobas, Ulrike Grossner, Bengt G. Svensson
Abstract:Using impedance spectroscopy (IS) for the characterization of SiO2/4H-SiC (MOS) structures, insight on the capacitive and resistive...
501
Authors: Siti Hashimah Mohd Hanif, Walter Charles Primus, Abdul H. Shaari, Jumiah Hassan
Chapter 5: Manganite and Magnetic Materials
Abstract:Composition of La0.7Sr0.3Mn0.4Ti0.6 O3 has been prepared using solid state reaction...
278
Authors: Yu Cheng Wang, Yu Ming Zhang, Ren Xu Jia
3.2 MOS Processing, SiC-SiO2 Interfaces and other Dielectrics
Abstract:SiO2 with varying thickness (0, 4.45, and 8.05 nm) were grown on n type 4H-SiC epilayer by thermal oxidation and...
689
Authors: Martin Domeij, Benedetto Buono, Krister Gumaelius, Fredrik Allerstam
3.2 MOS Processing, SiC-SiO2 Interfaces and other Dielectrics
Abstract:Lateral SiC MOSFETs and NMOS capacitors were fabricated and electrically evaluated for channel mobility, DIT and gate oxide...
611