Paper Title:
Effect of Temperature on Microstructure and Electrical Properties of (Y, Ta)-Doped TiO2 Capacitor-Varistor Ceramics
  Abstract

The microstructure and nonlinear electrical behavior and dielectric properties of the varistor, which are composed of (Y2O3, Ta2O5)-doped TiO2 ceramics, were investigated for various sintering temperatures. It is assumed that the moderate sintering temperature improves the permitivity of TiO2 ceramics, together with high nonlinear properties. The varistor of 99.6 mol%-0.3 mol%Y2O3-0.1 nol%Ta2O5 composite sintered at 1400 °C has a maximal nonlinear coefficient of α =4.4, a low breakdown voltage of 10.8 V/mm, the ultrahigh electrical permittivity of 7.73× 104 and low tanδ of 0.34. The sintering temperature plays an important an important role on the nonlinear electrical characteristics and dielectric properties of the ceramics through its influences on the microstructure of samples.

  Info
Periodical
Edited by
Zeng Zhu
Pages
173-177
DOI
10.4028/www.scientific.net/AMR.214.173
Citation
T. G. Wang, Q. Qin, W. J. Zhang, "Effect of Temperature on Microstructure and Electrical Properties of (Y, Ta)-Doped TiO2 Capacitor-Varistor Ceramics", Advanced Materials Research, Vol. 214, pp. 173-177, 2011
Online since
February 2011
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