Paper Title:
Phonon Modes in AlGaN Alloy with AlGaN/GaN MQW Interlayer
  Abstract

500nm AlGaN thick layer with AlGaN/GaN MQW interlayer was grown on sapphire substrate for UV detector and resonant tunneling diodes by MOCVD equipment. We were strongly interesting in the stress information of QW. There are a big mismatch of lattice between AlN and GaN.The growth of thick and high quality AlGaN is difficult task. AlGaN/GaN MQW layers were designed to relax the big mismatch stress. Many researcher focused on the stress relax mechanism for the growth of AlGaN alloy. The stress in QW can change the band gap structure and carrier contents of polarize induced charge. Raman spectra were a useful tool to observe the stress of semiconductor materials without damaging the sample. Using 514nm green laser, we only obtained the phonon modes of GaN. So applying 325nm Ar ion laser, we can observed the phonon modes spectra of both AlGaN and GaN layers. According to resonance conditions, the phonon modes of 789.74 cm-1 was origin from AlGaN alloy layer. The phonon modes of 740.89 cm-1 and 575.06 cm-1 were origin from GaN layer. Compared to other results, GaN layer was compress strain. We determined that AlGaN/GaN MQW interlayer relaxed strain stress from lattice mismatch, and phonon modes were clearly observed.

  Info
Periodical
Edited by
Zeng Zhu
Pages
526-530
DOI
10.4028/www.scientific.net/AMR.214.526
Citation
J. Zhou, Y. F. Jin, E. G. Dai, Z. J. Yang, B. Shen, "Phonon Modes in AlGaN Alloy with AlGaN/GaN MQW Interlayer", Advanced Materials Research, Vol. 214, pp. 526-530, 2011
Online since
February 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Ernesto E. Cortés, Fernando M. Torres
Abstract:In this paper a model was proposed to calculate the interface potential of a non ideal finite crystal. Most of the research in this issue...
55
Authors: Cheng Chen, Xiang Ping Shu, Hua Yang Sun, Zhi Ren Qiu, Ting Wei Liang, Li Wei Tu, Zhe Chuan Feng
Chapter 13: Thin Films
Abstract:The temperature dependence Raman scattering from m-plane GaN thin films grown on m-plane sapphire substrate by Molecular Beam Epitaxy (MBE)...
1453
Authors: Sebastian Roensch, Victor Sizov, Takuma Yagi, Saad Murad, Lars Groh, Stephan Lutgen, Michael Krieger, Heiko B. Weber
Chapter 6: Interface Characterization
Abstract:The impact of the thickness of an AlN spacer in AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures on the Hall mobility was...
502
Authors: Man Zhao, Fei Ma, Hai Bing Zheng, Dong Yang, Ke Wei Xu
Abstract:Abstract. The phonon spectrum of zigzag h-BN nanoribbons with the edges passivated by hydrogen atoms under tensile strain along the axis...
138
Authors: Petr Řehák, Miroslav Černý
Chapter 2: Atomistic studies on deformation and fracture
Abstract:Lattice dynamics and stability of fcc crystal of Ni under isotropic (hydrostatic) tensile loading are studied from first principles using...
47