Paper Title:
A Model of Threshold Voltage in FinFET
  Abstract

A physics-based threshold voltage model is proposed, according to the electrostatics distribution in Si body of FinFET which is obtained by 2-D numerical simulation. Threshold voltage of FinFET calculated from the model is matched with results of numerical simulation. Influences of polysilicon gate doping concentration, Si body doping concentration, the width and height of Si body and the gate oxide thickness on threshold voltage were investigated. As results,Si body doping concentration, gate doping concentration and the width of Si body have been found to be the most important parameters for the design of threshold voltage of FinFET-like devices.

  Info
Periodical
Edited by
Yuhang Yang, Xilong Qu, Yiping Luo and Aimin Yang
Pages
167-170
DOI
10.4028/www.scientific.net/AMR.216.167
Citation
J. Liu, L. Li, X.H. Zhang, "A Model of Threshold Voltage in FinFET", Advanced Materials Research, Vol. 216, pp. 167-170, 2011
Online since
March 2011
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