Paper Title:
Current Formulas of Silicon-Glass Anodic Bonding
  Abstract

To simulate the whole process of anodic bonding accurately, this paper makes the research on the current of anodic bonding with area and point cathode respectively. Based on the known models of anodic bonding, novel current formulas are deduced for anodic bonding with area cathode by means of the relation between glass resistivity and temperature. After calibrated by statistics of experimental data, the formulas quantitatively describe the relation between bonding current with time, as well as bonding voltage and bonding temperature. Further, using spreading model of anodic bonding, an approach to dealing with the problem of point cathode current is presented. The experiments prove that the current formulas from the approach are able to indicate the law of point cathode current.

  Info
Periodical
Edited by
Yuhang Yang, Xilong Qu, Yiping Luo and Aimin Yang
Pages
278-284
DOI
10.4028/www.scientific.net/AMR.216.278
Citation
J. L. Tang, X. W. Liu, R. Y. Chuai, H. F. Zhang, "Current Formulas of Silicon-Glass Anodic Bonding", Advanced Materials Research, Vol. 216, pp. 278-284, 2011
Online since
March 2011
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