Paper Title:
Electronic Structures of Donor-Acceptor-Donor Trimer Codopants in Silicon
  Abstract

The total energies of donor-acceptor-donor D2A trimer codopants (D = As and Sb, A = B, Al, Ga, In and Tl) in Si and their electronic geometrically stable structures were studied using ab initio calculations in order to propose new dopants for the formation of ultra shallow junctions with high carrier concentrations in the source/drain regions. The results of the calculations indicated that the trimer codopants were formed in Si and were stable. The trimer codopants are also able to activate the inactive complexes As2V and Sb2V by codoping acceptor atoms that occupy vacant sites. In particular, As2Al, As2Ga, Sb2B and Sb2Ga resulted in both shallower donor levels and higher solid solubility compared to traditional single donor atoms such as As and Sb.

  Info
Periodical
Edited by
Yuhang Yang, Xilong Qu, Yiping Luo and Aimin Yang
Pages
402-407
DOI
10.4028/www.scientific.net/AMR.216.402
Citation
N. Kambara, H. Kawanishi, "Electronic Structures of Donor-Acceptor-Donor Trimer Codopants in Silicon", Advanced Materials Research, Vol. 216, pp. 402-407, 2011
Online since
March 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Nguyen Tien Son, Patrick Carlsson, Andreas Gällström, Björn Magnusson, Erik Janzén
Abstract:Semi-insulating (SI) 4H-SiC substrates doped with vanadium (V) in the range 5.5×1015 –1.1×1017 cm–3 were studied by electron paramagnetic...
401
Authors: Hong Ling Tan, Cong Ying Jia, Chao Xiang, Ying Xiang Yang
Chapter 3: Industrial Robotics and Automation
Abstract:Calculate the electronic structure of alkali metal ion-doped Zn crystal, based on density functional theory (DFT) first-principles plane-wave...
1501
Authors: Hiroyuki Kawanishi, Yoshinori Hayafuji
Chapter 2: Materials - Study, Modeling and Technologies
Abstract:It is known that acceptor-carbon complexes have ionization energies less than those of the corresponding substitutional, separate acceptors...
154
Authors: Hiroyuki Kawanishi, Yoshinori Hayafuji
Chapter 5: Materials Science and Technologies
Abstract:Electronic structures of silicon with carbon, indium, or indium-carbon dimers were calculated to investigate the interaction between indium...
205
Authors: Qi Xin Wan, Jia Yi Chen, Zhi Hua Xiong, Dong Mei Li, Bi Lin Shao, Guo Dong Liu
Chapter 1: Composites
Abstract:The first-principles with pseudopotentials method based on the density functional theory was applied to calculate the geometric structure,...
214