Paper Title:
Optical and Electrical Character of SICGe/SIC Heterojunction Phototransistor with Charge Compensation Layer
  Abstract

The optical properties of SiCGe epitaxial on 6H-SiC substrate by LPCVD were investigated by transmittance measurements. Swanepoel methods were used in order to calculate the optical properties of the sample. The result was use to simulation the performance of n-SiC/p-SiCGe/n-SiCGe heterojunction phototransistor with charge compensation layer. Simulation results show that with wide bandgap SiC emitter and p-type SiCGe charge-compensation layer, device responsivity doubled and breakdown voltage increased from 440V to 580V for the given structure

  Info
Periodical
Edited by
Yuhang Yang, Xilong Qu, Yiping Luo and Aimin Yang
Pages
544-547
DOI
10.4028/www.scientific.net/AMR.216.544
Citation
L. Cao, H. B. Pu, Z. M. Chen, S. J. Zhou, "Optical and Electrical Character of SICGe/SIC Heterojunction Phototransistor with Charge Compensation Layer", Advanced Materials Research, Vol. 216, pp. 544-547, 2011
Online since
March 2011
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