Surface texturing of silicon can reduce the reflectance of incident light and hence increase the conversion efficiency of solar cells. Many approaches have been present in texturing silicon solar cell. As a practical method, chemical wet etching has been widely used in monocrystalline silicon and multicrystalline silicon (mc-Si), but the cost and high reflectance hamper its widely used. In this paper, a new approach is present by using ionized bubble to texture multicrystalline solar cell. The electric field and ultrasonic wave is introduced into traditional chemical wet etching. After mixed solution ionized by electrolysis and gasified by the ultrasonic wave, the ionized bubble is formed. The movement of ionized bubble is observed to study the impact on the surface of mc-Si solar cell. At last, a spectrophotometer was used to measure mc-Si surface reflectance to test the efficiency of two methods. The result express that the reflectance of mc-Si surface textured by ionized bubble is much low than that of chemical mixed acid etching.