Paper Title:

Point Defects Generation Kinetics in the Si-SiO2 System and its Influence on the Interface Properties

Periodical Advanced Materials Research (Volume 222)
Main Theme Global Research and Education
Edited by Arturs Medvids
Pages 102-105
DOI 10.4028/www.scientific.net/AMR.222.102
Citation Daniel Kropman et al., 2011, Advanced Materials Research, 222, 102
Online since April, 2011
Authors Daniel Kropman, Tiit Kärner, Sergei Dolgov, Ivo Heinmaa, Charalamos A. Londos
Keywords EPR, Hydrogen Impurity, NMR, Point Defect, Si-SiO2 Interface
Price US$ 28,-
Article Preview
View full size
Abstract

It has been shown by means of EPR and NMR technique that at the Si-SiO2 interface at appropriate oxidation temperature (time) local dynamical equilibrium may be achieved. At oxidation temperature 1130oC the dencity of point defects is less than at lower and higher temperature (1100oC and 1200ºC) and the content of absorbed impurities (hydrogen, oxygen) diminishes.