Stimulated Emission from Wide-Gap Semiconductors
|Periodical||Advanced Materials Research (Volume 222)|
|Main Theme||Global Research and Education|
|Edited by||Arturs Medvids|
|Citation||Edmundas Kuokstis, 2011, Advanced Materials Research, 222, 110|
|Online since||April, 2011|
|Keywords||Electron-Hole Plasma, Exciton-Exciton Interaction, III-Nitrides, Inverted Population, Optical Gain, Stimulated Emission, Zinc Oxide (ZnO)|
Stimulated emission and optical gain problems are reviewed on the basis of analysis of highly photoexcited III-Nitride and ZnO wide-gap materials. Spontaneous and stimulated emission along with optical gain of these materials in UV region is analyzed. The possible mechanisms of inverted population in In-containing materials and ZnO semiconductors are discussed involving mechanisms of dense electron-hole plasma, carrier (exciton) localization, as well as various interaction processes in dense exciton gas.