Paper Title:
Stimulated Emission from Wide-Gap Semiconductors
  Abstract

Stimulated emission and optical gain problems are reviewed on the basis of analysis of highly photoexcited III-Nitride and ZnO wide-gap materials. Spontaneous and stimulated emission along with optical gain of these materials in UV region is analyzed. The possible mechanisms of inverted population in In-containing materials and ZnO semiconductors are discussed involving mechanisms of dense electron-hole plasma, carrier (exciton) localization, as well as various interaction processes in dense exciton gas.

  Info
Periodical
Edited by
Arturs Medvids
Pages
110-113
DOI
10.4028/www.scientific.net/AMR.222.110
Citation
E. Kuokstis, "Stimulated Emission from Wide-Gap Semiconductors", Advanced Materials Research, Vol. 222, pp. 110-113, 2011
Online since
April 2011
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