Paper Title:
Stimulated Emission from Wide-Gap Semiconductors
| Periodical | Advanced Materials Research (Volume 222) |
|---|---|
| Main Theme | Global Research and Education |
| Edited by | Arturs Medvids |
| Pages | 110-113 |
| DOI | 10.4028/www.scientific.net/AMR.222.110 |
| Citation | Edmundas Kuokstis, 2011, Advanced Materials Research, 222, 110 |
| Online since | April, 2011 |
| Authors | Edmundas Kuokstis |
| Keywords | Electron-Hole Plasma, Exciton-Exciton Interaction, III-Nitrides, Inverted Population, Optical Gain, Stimulated Emission, Zinc Oxide (ZnO) |
| Price | US$ 28,- |
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Abstract
Stimulated emission and optical gain problems are reviewed on the basis of analysis of highly photoexcited III-Nitride and ZnO wide-gap materials. Spontaneous and stimulated emission along with optical gain of these materials in UV region is analyzed. The possible mechanisms of inverted population in In-containing materials and ZnO semiconductors are discussed involving mechanisms of dense electron-hole plasma, carrier (exciton) localization, as well as various interaction processes in dense exciton gas.
