Paper Title:
Comparative Study of Photoluminescence in Silicon and Zinc Oxide Nanowires
  Abstract

The comparative study of indirect and direct gap (Si and ZnO, respectively) semiconductor nanowires (NWs) is reported. The NWs were grown on silicon substrates by gold-assisted self-assembly technique. SEM study demonstrated high-density of nanowires. HRTEM studies show that both types of NWs (Si and ZnO) are the naturally-grown heterostructures consisting of crystalline core and envelope. The variation of photoluminescence properties of NWs with cross section and/or the material of the samples is analyzed.

  Info
Periodical
Edited by
Arturs Medvids
Pages
189-192
DOI
10.4028/www.scientific.net/AMR.222.189
Citation
G.Y. Rudko, A.I. Klimovskaya, "Comparative Study of Photoluminescence in Silicon and Zinc Oxide Nanowires", Advanced Materials Research, Vol. 222, pp. 189-192, 2011
Online since
April 2011
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