Paper Title:
Influence of Impurity Band on Seebeck Coefficient in Heavily-Doped Si
  Abstract

We calculated the Seebeck coefficient of heavily-doped Si based on theoretical models of impurity-band formation, ionization-energy shift and conduction-band tailing. The impurity band was described by using two kinds of band-width definitions and it was found that the calculated Seebeck coefficient strongly depended on the impurity-band definition. In the high impurity-concentration region, the Seebeck coefficient decreased with increasing impurity concentration, and with a peak around 1×1019 cm-3. This result was qualitatively in good agreement with the experimental result, while there was quantitative disagreement between them.

  Info
Periodical
Edited by
Arturs Medvids
Pages
197-200
DOI
10.4028/www.scientific.net/AMR.222.197
Citation
F. Salleh, H. Ikeda, "Influence of Impurity Band on Seebeck Coefficient in Heavily-Doped Si", Advanced Materials Research, Vol. 222, pp. 197-200, 2011
Online since
April 2011
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