Paper Title:
Si-Based Single-Dopant Atom Devices
  Abstract

We have recently proposed and demonstrated a new device concept, “Si-based single-dopant atom device”, consisting of only one or a few dopant atoms in the channel of Si field-effect transistors. The device characteristics are determined by a dopant, which is mediating electron or hole transport between source and drain electrodes. In this paper, our recent results on electronic and photonic applications are introduced. Furthermore, single-dopant images obtained by a scanning probe microscope are also presented.

  Info
Periodical
Edited by
Arturs Medvids
Pages
205-208
DOI
10.4028/www.scientific.net/AMR.222.205
Citation
M. Tabe, D. Moraru, A. Udhiarto, S. Miki, M. Anwar, Y. Kawai, T. Mizuno, "Si-Based Single-Dopant Atom Devices", Advanced Materials Research, Vol. 222, pp. 205-208, 2011
Online since
April 2011
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