Paper Title:
P-N Junction Formation in ITO/p-Si Structure by Powerful Laser Radiation for Solar Cells Applications
  Abstract

The research report is devoted to the development of a new method of nanostructures formation in ITO/p-Si/Al structure with powerful laser radiation and study of its optical and electrical properties for solar cells applications. It was shown that after the structure irradiation by Nd:YAG laser second harmonic, dark current voltage characteristics become diode-like. Increase of ITO/p-Si/Al solar cell efficiency after irradiation by the laser, using photocurrent voltage characteristic method, was shown.

  Info
Periodical
Edited by
Arturs Medvids
Pages
225-228
DOI
10.4028/www.scientific.net/AMR.222.225
Citation
A. Medvid', P. Onufrijevs, E. Dauksta, J. Barloti, A. G. Ulyashin, I. Dmytruk, I. Pundyk, "P-N Junction Formation in ITO/p-Si Structure by Powerful Laser Radiation for Solar Cells Applications", Advanced Materials Research, Vol. 222, pp. 225-228, 2011
Online since
April 2011
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