Paper Title:
Single-Photon Detector Based on MOSFET Electrometer with Single-Electron Sensitivity
  Abstract

A unique single-photon detector is reported, which utilizes scaled-down silicon-on- insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) with single-electron sensitivity, and features low-voltage operation without carrier multiplication and low dark counts. Primary single-photon detection characteristics are presented, and then several issues related to operation speed and quantum efficiency are to be addressed.

  Info
Periodical
Edited by
Arturs Medvids
Pages
3-7
DOI
10.4028/www.scientific.net/AMR.222.3
Citation
H. Inokawa, W. Du, M. Kawai, H. Satoh, A. Ono, V. Singh, "Single-Photon Detector Based on MOSFET Electrometer with Single-Electron Sensitivity", Advanced Materials Research, Vol. 222, pp. 3-7, 2011
Online since
April 2011
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