Paper Title:
Laser-Induced Doping of CdTe Crystals in Different Environments
  Abstract

Different procedures of laser-induced doping of the surface region of semi-insulating CdTe semiconductor are discussed. CdTe crystals pre-coated with an In dopant film were subjected to irradiation with nanosecond laser pulses in different environments (vacuum, gas or water). The dopant self-compensation phenomenon was overcome under laser action and In impurity with high concentration was introduced in a thin surface layer of CdTe. In the case of a thick (300-400 nm) In dopant film, laser-induced shock wave action has been considered as the mechanism of solid-phase doping. Formed In/CdTe/Au diode structures showed high rectification depending on the fabrication procedure. Diodes with low leakage current were sensitive to high energy radiation.

  Info
Periodical
Edited by
Arturs Medvids
Pages
32-35
DOI
10.4028/www.scientific.net/AMR.222.32
Citation
V. A. Gnatyuk, S. N. Levytskyi, O. I. Vlasenko, T. Aoki, "Laser-Induced Doping of CdTe Crystals in Different Environments", Advanced Materials Research, Vol. 222, pp. 32-35, 2011
Online since
April 2011
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