Paper Title:
“Black Silicon” Formation by Nd:YAG Laser Radiation
  Abstract

The possibility to form “black silicon” on the surface of Si structure by Nd:YAG laser radiation has been shown. The shape and height of micro-cone structure strongly depends on Nd:YAG laser intensity and number of laser pulses. Light is repeatedly reflected between the cones in the way that most of it is absorbed. Si micro-cone structure spectral thermal radiation is close to black body spectral radiance, which makes this structure useful for solar cells application. The micro-chemical analysis performed by SEM has shown that the microstructures contain NiSi2. This was approved by presence of LO phonon line in Raman back scattering spectrum. The control of micro-cone shape and height was achieved by changing the laser intensity and number of pulses.

  Info
Periodical
Edited by
Arturs Medvids
Pages
44-47
DOI
10.4028/www.scientific.net/AMR.222.44
Citation
A. Medvid', P. Onufrijevs, E. Dauksta, V. Kyslyi, "“Black Silicon” Formation by Nd:YAG Laser Radiation", Advanced Materials Research, Vol. 222, pp. 44-47, 2011
Online since
April 2011
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