Paper Title:
Optical Characterization of MBE-Grown ZnO Epilayers
  Abstract

Optical characterization of molecular-beam-epitaxy-grown ZnO and MgZnO epitaxial layers on sapphire (0001) substrates is presented. The parameters such as carrier recombination time and optical gain coefficient are analyzed. Radiative recombination mechanisms of ZnO in dense quasiparticle system are discussed. The ZnO epilayers even with lower structural quality are tolerable for applications in optoelectronics as light emitters.

  Info
Periodical
Edited by
Arturs Medvids
Pages
86-89
DOI
10.4028/www.scientific.net/AMR.222.86
Citation
M. Karaliunas, T. Serevicius, E. Kuokstis, S. Juršėnas, S. Y. Ting, J. J. Huang, C. C. Yang, "Optical Characterization of MBE-Grown ZnO Epilayers", Advanced Materials Research, Vol. 222, pp. 86-89, 2011
Online since
April 2011
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