Paper Title
Page
Authors: Artur Medvid', Pavels Onufrijevs, Edvins Dauksta, Volodymyr Kyslyi
Abstract:The possibility to form “black silicon” on the surface of Si structure by Nd:YAG laser radiation has been shown. The shape and height of...
44
Authors: André Egbert, Oliver Brunke
Abstract:Nowadays, X-ray tube-based high-resolution CT systems are widely used in scientific research and industrial applications. But the potential,...
48
Authors: Masanori Eguchi, Toshitaka Yamakawa, Takeshi Yamakawa
Abstract:In travelling-wave electric fields, particles are propelled along electrode arrays by a propulsion force. The propulsion force depends on an...
52
Authors: K.Z. Liu, Masaru Shimomura, Y. Fukuda
Abstract:Surface electronic structures of n-GaP(001) and p-InP(001) with and without sulfur treatment have been studied by X-ray photoelectron...
56
Authors: Takeshi Hashimoto, Mitsuo Kaneko, András Rövid, Hiroaki Ohta, Akira Fukuda, Masamu Aniya, Nozomu Naito, Hiroyuki Enomoto, Pedro Skvarca
Abstract:To reveal the influence of global warming on glaciers, highly accurate observations of glacier movement must continue every year. It is...
62
Authors: Hiroya Ikeda, Faiz Salleh
Abstract:We propose a novel single-electron refrigerator (SER) which can be fabricated in silicon-on-insulator wafers. The SER has a structure of...
66
Authors: Tetsu Ito, Wataru Shichi, Masao Ichida, Hideki Gotoh, Hidehiko Kamada, Hiroaki Ando
Abstract:Electron spin-spin interaction in asymmetric coupled GaAs/AlGaAs quantum well (QW) is investigated through electron spin precession...
70
Authors: Ryszard Jabłoński, Roland Nowak
Abstract:The paper presents the method, configuration and calibration of special system for measuring the size of particles. It is designed for...
74
Authors: Kamen D. Kanev, Petro V. Gnatyuk, Volodymyr A. Gnatyuk
Abstract:In this work we consider some laser based methods and technologies for surface engraving and layered marking of opaque and transparent...
78
Authors: Aliaksandra Karabko, Anatoly Dostanko, Natalia Lapchuk, Pavels Onufrijevs
Abstract:Silicon p-type (100) wafers implanted with Ni, Co, Fe ions to a dose range of 3∙1013–3∙1016 cm-2 have been investigated by means of EPR. The...
82
Showing 11 to 20 of 91 Paper Titles