Paper Title:
Monte Carlo Simulation for an Electrical Discharge in O2
  Abstract

The generation of plasmas and the initiation of electrical breakdown are realized by the phenomenon of electrical discharge which is provoked when we apply a sufficient electric field in a gas. Consequently the free charges are accelerated, new charged particles are created and others are destructed. This can be ranged in four phenomena: elastic collision (recombination), attachment, excitation and ionization. The aim of this paper is to study the basic phenomena in an electrical discharge in the case of Oxygen O2. Monte Carlo Simulation is used to follow the random trajectory of free charges determining in each path many parameters of the discharge. To determinate electrical and physical parameters, we have used the sampling laws. The spatial distributions of space charges (electrons, positive and negative ions) are also obtained. The determination of electrical field depends on distributions of charged particles obtained by solving the Maxwell equations.

  Info
Periodical
Edited by
El-Hachemi Amara and Djamila Bennaceur-Doumaz
Pages
211-214
DOI
10.4028/www.scientific.net/AMR.227.211
Citation
L. Zeghichi, L. Mokhnache, M. Djebabra, "Monte Carlo Simulation for an Electrical Discharge in O2", Advanced Materials Research, Vol. 227, pp. 211-214, 2011
Online since
April 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Zhi Wen Wu, Shu Shu, Da Ren Yu, Xiang Yang Liu, Ning Fei Wang
Abstract:The wall material plays an important role for the electron current due to near wall conductivity in Hall Thrusters. A Monte Carlo method...
519
Authors: Qun Yan Tan, Xin Zhao, Xue Bin Zhang
Abstract:The two methods of artificial damping and artificial stiffness are developed in dynamic explicit FEA code for ring rolling. Advantages and...
326
Authors: Faiz Salleh, Hiroya Ikeda
Abstract:We calculated the Seebeck coefficient of heavily-doped Si based on theoretical models of impurity-band formation, ionization-energy shift and...
197
Authors: Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Sigo Scharnholz, Dominique Planson
Chapter II: Fundamental and Characterization of SiC
Abstract:The behavior of 4H-SiC power devices in severe environment with varying temperature is a key characteristic indicating their reliability....
223
Authors: Pavel Hazdra, Stanislav Popelka, Vít Záhlava, Jan Vobecký
Chapter 10: Wide-Bandgap Semiconductors
Abstract:The effect of neutron, electron and ion irradiation on electrical characteristics of unipolar 1700V SiC power devices (JBS diodes, JFETs and...
421