Paper Title:
Angular Distribution and Ion Time of Flight Produced on Silicon Target by Laser Irradiation
  Abstract

The growth of thin films by laser ablation involves very complex physical processes. The quality of the layer and stoechiometry of the deposits depend on key parameters like the ion energy and their angular distribution. The evolution of ions number and energy, and the angular distributions in regards to the incident laser energy, have been studied by the mean of a charges collector. We present the polar diagrams of energy and number of ions collected by irradiating a silicon target using an excimer laser at different energies.

  Info
Periodical
Edited by
El-Hachemi Amara and Djamila Bennaceur-Doumaz
Pages
31-34
DOI
10.4028/www.scientific.net/AMR.227.31
Citation
Y. Belaroussi, T. Kerdja, S. Malek, "Angular Distribution and Ion Time of Flight Produced on Silicon Target by Laser Irradiation", Advanced Materials Research, Vol. 227, pp. 31-34, 2011
Online since
April 2011
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