Paper Title:
Research on Effect of High Energy Implant to Resist Thickness
  Abstract

The experiment discusses the issue of high-energy implant to the resist thickness and how the resist etched away during implantation process. The resist that is use as a mask or material to block the dopant ion such as Phosphorous, Boron or Arsenic introduces into silicon substrate. It is a common practice by all semiconductor industrial players to use photoresist as their protection on desired area in which purposely set as non-implanted area. The research benefits the engineer on determine the sufficient photoresist thickness for specific implant energy.

  Info
Periodical
Advanced Materials Research (Volumes 230-232)
Edited by
Ran Chen and Wenli Yao
Pages
718-722
DOI
10.4028/www.scientific.net/AMR.230-232.718
Citation
H. Mamat, N. A. Rahim, M. Z. A. Wahab, A. Jalar, "Research on Effect of High Energy Implant to Resist Thickness", Advanced Materials Research, Vols. 230-232, pp. 718-722, 2011
Online since
May 2011
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Price
$32.00
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