Paper Title:
Electrical, Optical, and Etching Characteristics of ZnO:Al Films Prepared by RF Magnetron
  Abstract

ZnO:Al (AZO) films were prepared by radio frequency (RF) magnetron sputtering at various RF power (70-200W), the electrical and optical properties of AZO films were first investigated. The films deposited at 170W and 200W had the optimum opto-electrical property and then were surface textured by a post-deposition chemical etching with 0.5% HCl for 10-30s, all these films developed a craterlike surface morphology and the crater became larger and deeper as the etching time was increased. The light scattering property of AZO films was researched by calculated spectral haze. The AZO film deposited at 170W and etched 30s had the optimal light scattering property due to its most suitable craterlike surface morphology. Introduction

  Info
Periodical
Advanced Materials Research (Volumes 233-235)
Edited by
Zhong Cao, Lixian Sun, Xueqiang Cao, Yinghe He
Pages
1862-1867
DOI
10.4028/www.scientific.net/AMR.233-235.1862
Citation
J. J. He, M. Z. Wu, Y. Y. Wang, Y. M. Yu, X. M. Wu, L. J. Zhuge, "Electrical, Optical, and Etching Characteristics of ZnO:Al Films Prepared by RF Magnetron", Advanced Materials Research, Vols. 233-235, pp. 1862-1867, 2011
Online since
May 2011
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$32.00
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