Paper Title:
Prepared and Surface Analyzed of Nano-Silicon Nitride Thin Films
  Abstract

Thin silicon nitride films were prepared on PET by r.f. reactive sputtering. Deposition Rate, reactive mechanisms, the thickness attribution, chemical stoichiometry and impurity were studied by means of RBS, XPS, and ellipsometer. Results show that chemical stoichiometric films with N-to-Si atomic ratio of 4:3 were achieved even at room temperature. Depth profiles of XPS and SIMS reveal that oxide exists only at the interface between nitride and substrate and Ar atoms are buried in the films.

  Info
Periodical
Advanced Materials Research (Volumes 233-235)
Edited by
Zhong Cao, Lixian Sun, Xueqiang Cao, Yinghe He
Pages
2015-2018
DOI
10.4028/www.scientific.net/AMR.233-235.2015
Citation
G. W. Yu, J. Dong, Y. Tian, W. X. Li, X. Gong, "Prepared and Surface Analyzed of Nano-Silicon Nitride Thin Films", Advanced Materials Research, Vols. 233-235, pp. 2015-2018, 2011
Online since
May 2011
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$32.00
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