Paper Title:
Effects of Oxygen-Deficient Ambience Annealing on Polycrystalline Y2O3 Film
  Abstract

Polycrystalline Y2O3 thin films have been prepared by radio frequency (RF) reactive sputtering. The topographies of Y2O3 films were shown by AFM. The XPS measurement has found the interfacial silicates and the amorphous silicon sub-oxide (SiOx) interfacial layer which is also indicated by the FTIR investigation. The interfacial reactions have been induced by an oxygen-deficient or oxygen-sufficient reaction environment at Y2O3/Si interface.

  Info
Periodical
Advanced Materials Research (Volumes 233-235)
Edited by
Zhong Cao, Lixian Sun, Xueqiang Cao, Yinghe He
Pages
2367-2370
DOI
10.4028/www.scientific.net/AMR.233-235.2367
Citation
J. P. Zhang, Y. D. Chen, G. Z. Zhou, J. L. Lu, "Effects of Oxygen-Deficient Ambience Annealing on Polycrystalline Y2O3 Film", Advanced Materials Research, Vols. 233-235, pp. 2367-2370, 2011
Online since
May 2011
Keywords
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