Paper Title:
Comparative Study of Low Dielectric Constant Material Deposited Using Different Precursors
  Abstract

Two kinds of organosilicate precursors, trimethylsilane (3MS) and diethoxymethylsilane (DEMS), were used to produce low-k films by plasma-enhanced chemical vapor deposition (PECVD) in this work. The experimental results indicate that DEMS-based low-k films have superior electrical performance and better thermal stability as compared to 3MS-based low-k films. Therefore, DEMS-based films are the promising low-k materials which can be integrated in very large scale integration circuit as an inter-layer dielectric material.

  Info
Periodical
Advanced Materials Research (Volumes 233-235)
Edited by
Zhong Cao, Lixian Sun, Xueqiang Cao, Yinghe He
Pages
2480-2485
DOI
10.4028/www.scientific.net/AMR.233-235.2480
Citation
Y. L. Cheng, Y. S. Lu, T. J. Chiu, "Comparative Study of Low Dielectric Constant Material Deposited Using Different Precursors", Advanced Materials Research, Vols. 233-235, pp. 2480-2485, 2011
Online since
May 2011
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Price
$32.00
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