Paper Title:
The Co-Doping Effect of Si and Mn on the Dilute Ferromagnetic Semiconductor Thin Films
  Abstract

The co-doping effect of Si and Mn have been studied in the low temperature grown ferromagnetic semiconductor (Ga,Mn)As thin films. It is found that Si doping decreases the Curie temperatures of the ferromagnetic sample due to carrier compensation and defects formation. The transport studies show that the Si incorporation increases the resistivity of the (Ga,Mn)As thin films, and increase the planar Hall resistance while increases the resistance transitions in the magnetic samples.

  Info
Periodical
Advanced Materials Research (Volumes 233-235)
Edited by
Zhong Cao, Lixian Sun, Xueqiang Cao, Yinghe He
Pages
2624-2628
DOI
10.4028/www.scientific.net/AMR.233-235.2624
Citation
G. Xiang, X. Zhang, "The Co-Doping Effect of Si and Mn on the Dilute Ferromagnetic Semiconductor Thin Films", Advanced Materials Research, Vols. 233-235, pp. 2624-2628, 2011
Online since
May 2011
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