Paper Title:
A Stretched Carbon Nanotube with a High-Density of Topological Defect
  Abstract

We have developed a theoretical method to obtain a single-walled carbon nanotube (SWCNT) with a high density of topological defects. Carbon nanotubes (CNTs) sustain elastic elongation up to 15-30% at low temperature because of the sufficiently high barrier of bond rotations. A large number of topological defects are activated simultaneously and widely distributed over the entire tube wall after heating the stretched tube to an elevated temperature. This is driven by the internal energy of the strained carbon nanotubes. The manner in which topological defects are distributed is affected by the initial strain and the heating temperature. Nanotubes with a large number of topological defects achieve the elongation without breaking.

  Info
Periodical
Advanced Materials Research (Volumes 236-238)
Edited by
Zhong Cao, Yinghe He, Lixian Sun and Xueqiang Cao
Pages
2225-2228
DOI
10.4028/www.scientific.net/AMR.236-238.2225
Citation
F. Y. Meng, G. S. Wang, S. Q. Shi, S. Ogata, "A Stretched Carbon Nanotube with a High-Density of Topological Defect", Advanced Materials Research, Vols. 236-238, pp. 2225-2228, 2011
Online since
May 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Fuccio Cristiano, El Mehdi Bazizi, Pier Francesco Fazzini, Simona Boninelli, Ray Duffy, Ardechir Pakfar, Silke Paul, Wilfried Lerch
Abstract:In this paper, we investigate the evolution of extended defects during a millisecond Flash anneal after a preamorphising implant. The...
269
Authors: Charalamos A. Londos, A. Andrianakis, D. Aliprantis, Efstratia N. Sgourou, Valentin V. Emtsev, H. Ohyama
Abstract:We present infrared (IR) spectroscopy measurements on carbon-rich, germanium-doped Czochralski-grown (Cz-Si) subjected to irradiation with 2...
187
Authors: Charalamos A. Londos, Efstratia N. Sgourou, A. Andrianakis, Andrzej Misiuk, Valentin V. Emtsev, H. Ohyama
Chapter 5: Point Defects in Si
Abstract:This paper reports experimental results on the production and annealing of oxygen-vacancy related (VOn, 1<n<5) and...
147
Authors: Jiu Xu Song, Hong Xia Liu
Chapter 8: Nanomaterials and Nanomanufacturing
Abstract:The electronic transport properties are the basis for investigations on silicon carbide nanotube (SiCNT), which are suitable to develop novel...
1130
Authors: Qiao Yun Ma, Gui Feng Chen, Hui Zhang, Jing Jing Xue, Peng Su, Qiu Yan Hao, Cai Chi Liu
Chapter 1: Academic Frontiers
Abstract:Electron irradiation on silicon results in the creation of vacancy (V) and silicon self-interstitial (I).Vacancy tends to integrate with...
115