Paper Title:
Chemical Mechanical Polishing of Cu Pattern Wafer Based Alkaline Slurry in GLSI with R(NH2)n as Complexing Agent
  Abstract

Chemical mechanical polishing (CMP) of Cu pattern wafer based alkaline slurry in GLSI with R(NH2)n as complexing agent was investigated. In Cu CMP procedure, it is necessary to minimize the surface dishing and erosion while maintaining good planarity. This requirements are met through the complexing agents. Based on the reaction mechanism analysis of Cu in alkaline slurry with R(NH2)n as complexing agent in CMP, the performance of Cu dishing and erosion were discussed. The results showed that the slurry stability can be improved obviously by the addition of R(NH2)n as complexing agent, both Cu1 and Cu2 have good dishing and erosion performance. Furthermore, the dishing condition of Cu2 (180-230nm) is better than that of Cu1 (280-370nm), and the erosion condition of Cu2 (230-260nm) is also better than that of Cu1 (450-500nm).

  Info
Periodical
Advanced Materials Research (Volumes 236-238)
Edited by
Zhong Cao, Yinghe He, Lixian Sun and Xueqiang Cao
Pages
3020-3023
DOI
10.4028/www.scientific.net/AMR.236-238.3020
Citation
Y. G. He, X. W. Gan, W. Hong, Y. Hu, Y. L. Liu, "Chemical Mechanical Polishing of Cu Pattern Wafer Based Alkaline Slurry in GLSI with R(NH2)n as Complexing Agent", Advanced Materials Research, Vols. 236-238, pp. 3020-3023, 2011
Online since
May 2011
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$32.00
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