Paper Title:
Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films Using by Plasma Treatment
  Abstract

To improve the electrical and physical properties of as-deposited BSTZ thin films, the oxygen plasma treatment process were used by a low temperature treatment. In this study, the BSTZ thin films were post-treated under 150°C and 25 mTorr in the inductively coupled plasma. After oxygen plasma process treatment, the capacitance of thin films increased from 150 to 300pF in C-V curves, and the passivation of oxygen vacancy and defect in leakage current density curves were found. The influence of oxygen plasma on the chemical bonding state and crystalline structure was investigated by using XPS and XRD measurement.

  Info
Periodical
Advanced Materials Research (Volumes 239-242)
Edited by
Zhong Cao, Xueqiang Cao, Lixian Sun, Yinghe He
Pages
1002-1005
DOI
10.4028/www.scientific.net/AMR.239-242.1002
Citation
K. H. Chen, C. L. Wu, J. Y. Lin, C. M. Cheng, "Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films Using by Plasma Treatment", Advanced Materials Research, Vols. 239-242, pp. 1002-1005, 2011
Online since
May 2011
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