Paper Title:
The Effect of Be and Mn Co-Doping on the Magnetic and Transport Properties of Ferromagnetic Semiconductor Thin Films
  Abstract

The co-doping effect of Be and Mn have been studied in the ferromagnetic semiconductor (Ga,Mn)As thin films. The measurement of magnetic properties shows that the Be doping decreases the Curie temperatures of the ferromagnetic sample due to defects formation. The transport studies show that the Be incorporation decreases the resistivity of the (Ga,Mn)As thin films. It is found that Be incorporation decreases the planar Hall resistance but increases the resistance transitions in the magnetic samples.

  Info
Periodical
Advanced Materials Research (Volumes 239-242)
Edited by
Zhong Cao, Xueqiang Cao, Lixian Sun, Yinghe He
Pages
127-131
DOI
10.4028/www.scientific.net/AMR.239-242.127
Citation
G. Xiang, X. Zhang, "The Effect of Be and Mn Co-Doping on the Magnetic and Transport Properties of Ferromagnetic Semiconductor Thin Films", Advanced Materials Research, Vols. 239-242, pp. 127-131, 2011
Online since
May 2011
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