Paper Title:
Porous Silicon Modification with ZnO Films Electro-Deposited from Zinc Nitrate Aqueous Solution by Pulsed Current of Rectangular Wave
  Abstract

The pulsed current of rectangular wave was used to electrolyzing zinc nitrate aqueous solution for the purpose of preparation of a transparent zinc oxide (ZnO) film by cathodic deposition. The current density of rectangular wave was 0.2 and 1.0 mA/cm2 , respectively. The former plays a role to deposit homogenous ZnO particles on the substrate surface and the latter plays the role to promote further growth of the particles and film formation. The structural and optical characterizations of the deposited films were performed with x-ray diffraction, scanning electron microscope, and measurements of optical absorption in UV-vis range. Similar technique has been used to modify as prepared porous silicon, resulting a green photoluminescence after 1 h annealing at 1273 K under oxygen atomsphere.

  Info
Periodical
Advanced Materials Research (Volumes 239-242)
Edited by
Zhong Cao, Xueqiang Cao, Lixian Sun, Yinghe He
Pages
150-155
DOI
10.4028/www.scientific.net/AMR.239-242.150
Citation
L. S. Chen, Y. Y. Liu, Y. P. Ban, H. X. Li, "Porous Silicon Modification with ZnO Films Electro-Deposited from Zinc Nitrate Aqueous Solution by Pulsed Current of Rectangular Wave", Advanced Materials Research, Vols. 239-242, pp. 150-155, 2011
Online since
May 2011
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$32.00
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