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Potential Analysis in Nanoturning of Single Crystal Silicon Using Molecular Dynamics

Journal Advanced Materials Research (Volumes 239 - 242)
Volume Advanced Materials
Edited by Zhong Cao, Xueqiang Cao, Lixian Sun, Yinghe He
Pages 3236-3239
DOI 10.4028/www.scientific.net/AMR.239-242.3236
Citation Ying Chun Liang et al., 2011, Advanced Materials Research, 239-242, 3236
Online since May, 2011
Authors Ying Chun Liang, Zhi Guo Wang, Ming Jun Chen, Jia Xuan Chen, Zhen Tong
Keywords Molecular Dynamics (MD), Nanoscale Cutting, Potential Energy, Single Crystal Silicon
Abstract

Molecular dynamics simulations of the single crystal silicon nanoscale cutting with a diamond tool in ductile mode are carried out to investigate the adhesion phenomenon. After relaxation the silicon atoms on the surface reconstruct to make the potential decrease. The silicon atoms close to the diamond tool have the lowest potential (<-5.5 eV) and form a stable structure with surface atoms on the tool surface.

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