Potential Analysis in Nanoturning of Single Crystal Silicon Using Molecular Dynamics |
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| Journal | Advanced Materials Research (Volumes 239 - 242) |
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| Volume | Advanced Materials |
| Edited by | Zhong Cao, Xueqiang Cao, Lixian Sun, Yinghe He |
| Pages | 3236-3239 |
| DOI | 10.4028/www.scientific.net/AMR.239-242.3236 |
| Citation | Ying Chun Liang et al., 2011, Advanced Materials Research, 239-242, 3236 |
| Online since | May, 2011 |
| Authors | Ying Chun Liang, Zhi Guo Wang, Ming Jun Chen, Jia Xuan Chen, Zhen Tong |
| Keywords | Molecular Dynamics (MD), Nanoscale Cutting, Potential Energy, Single Crystal Silicon |
| Abstract | Molecular dynamics simulations of the single crystal silicon nanoscale cutting with a diamond tool in ductile mode are carried out to investigate the adhesion phenomenon. After relaxation the silicon atoms on the surface reconstruct to make the potential decrease. The silicon atoms close to the diamond tool have the lowest potential (<-5.5 eV) and form a stable structure with surface atoms on the tool surface. |
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