Paper Title:
Study on Poly-Si Thin Films by Vacuum Evaporation
  Abstract

The process of Vacuum Evaporation and characteristic of poly-Si thin film on different kinds of substrates (copper and glass) are studied in this thesis. The samples were characterized by TEM, AFM and metallographic microscope. The result indicates that the samples after annealing treatment are polycrystalline. Thin film on copper substrate shows better properties in degree of crystallization, grain smoothness, compact density and uniformity. The thickness of thin films on both copper and glass substrates is 1.2µm.The grain size ranges from 0.1~0.15µm.And the pressure-resisting value of the poly-Si thin film is 384.2V.

  Info
Periodical
Advanced Materials Research (Volumes 239-242)
Edited by
Zhong Cao, Xueqiang Cao, Lixian Sun, Yinghe He
Pages
360-363
DOI
10.4028/www.scientific.net/AMR.239-242.360
Citation
Z. Wang, B. Li, C. Q. Fu, T. Murotani, "Study on Poly-Si Thin Films by Vacuum Evaporation", Advanced Materials Research, Vols. 239-242, pp. 360-363, 2011
Online since
May 2011
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Price
$32.00
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